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US 11,239,076 B2Granted
Film forming method and heat treatment apparatus
AssigneeTokyo Electron Limited
InventorsYutaka Motoyama, Hiroyuki Hayashi
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Abstract
A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.
Claims13
A film forming method comprising:
- forming an amorphous semiconductor film on a recess;
- forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film;
- and
- after the first polycrystalline semiconductor film is formed, forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.
1 more element
A heat treatment apparatus comprising:
- a process container accommodating a substrate having a recess on a surface of the substrate;
- a gas supply supplying a processing gas into the process container;
- a heater heating the substrate;
- and
- a controller,
- wherein the controller controls the gas supply and the heater to perform:
- forming an amorphous semiconductor film on the recess;
- forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film;
- and
- after the first polycrystalline semiconductor film is formed, forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.
7 more elements
Dependencies are inferred from the claim text.