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US 11,239,075 B2Granted
Lattice-mismatched semiconductor substrates with defect reduction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien Wu, I-Sheng Chen
Life of this patent
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Abstract
A structure includes a substrate having a first semiconductor material. The substrate has a recess. A bottom portion of the recess has a first sidewall and a second sidewall. The first sidewall intersects the second sidewall. The structure further includes an isolation feature surrounding the recess and a second semiconductor material disposed in the recess and in contact with the first semiconductor material. The second semiconductor material has lattice mismatch to the first semiconductor material.
Claims20
A structure, comprising:
- a substrate including a first semiconductor material, the substrate having a recess, a bottom portion of the recess having a first sidewall and a second sidewall, the first sidewall intersecting the second sidewall at a position below a top surface of the substrate;
- an isolation feature surrounding the recess, wherein topmost portions of the first and second sidewalls intersect sidewalls of the isolation feature, and wherein a bottommost portion of the isolation feature extends downward below the top surface of the substrate;
- and
- a second semiconductor material disposed in the recess and in contact with the first semiconductor material, the second semiconductor material having lattice mismatch to the first semiconductor material.
1 more element
A structure, comprising:
- a substrate having a trench, wherein a top portion of the trench has dielectric sidewalls, a bottom portion of the trench has semiconductor sidewalls comprising a first semiconductor material, and at least one of the semiconductor sidewalls is not perpendicular to a top surface of the substrate;
- a second semiconductor material disposed in the trench and in contact with the semiconductor sidewalls, wherein the second semiconductor material is different from the first semiconductor material;
- and
- multiple fins of the second semiconductor material in the trench.
1 more element
A structure, comprising:
- a substrate having a recess, wherein sidewalls of a lower portion of the recess include a first semiconductor material, and sidewalls of an upper portion of the recess include a first dielectric material;
- a second semiconductor material disposed in the recess, the second semiconductor material having lattice mismatch to the first semiconductor material, the second semiconductor material providing multiple fins;
- and
- an isolation feature between the multiple fins.
1 more element
Dependencies are inferred from the claim text.