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US 11,239,074 B2Granted
Germanium nanosheets and methods of forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorHung-Hsiang Cheng
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Abstract
Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a first material layer over a substrate;
- forming a first semiconductor layer over the first material layer;
- forming a second material layer over the first semiconductor layer, wherein the first material layer and the second material layer comprises a semiconductor material, the semiconductor material comprising a group IV semiconductor having tin in a concentration ranging from about 15% to about 25.5%;
- forming a second semiconductor layer over the second material layer, wherein the first semiconductor layer and the second semiconductor layer comprises germanium;
- patterning the second semiconductor layer, the second material layer, the first semiconductor layer, and the first material layer, thereby forming a stack of nanosheets;
- patterning the substrate to form a fin under the stack of nanosheets;
- and
- removing the first material layer and the second material layer.
5 more elements
A method of forming a semiconductor device, the method comprising:
- forming a stack of layers over a substrate, the stack of layers comprising a first material layer over the substrate, a first semiconductor layer over the first material layer, a second material layer over the first semiconductor layer, and a second semiconductor layer over the second material layer, wherein the first material layer and the second material layer comprises silicon tin with a concentration of tin between 15% and 20.3%;
- patterning the substrate and the stack of layers to form a fin having a stack of nanowires over the fin, the stack of nanowires comprising a first material nanowire on the substrate, a first semiconductor nanowire on the first material nanowire, a second material nanowire on the first semiconductor nanowire, and a second semiconductor nanowire on the second material nanowire, each nanowire of the stack of nanowires comprising a first section, a second section, and a channel region interposed between the first section and the second section;
- removing the first material layer and the second material layer in the channel region;
- and
- forming a dielectric layer around the first semiconductor nanowire and the second semiconductor nanowire in the channel region.
2 more elements
A method of forming a semiconductor device, the method comprising:
- forming a stack of nanosheets over a fin, the stack of nanosheets comprising alternating layers of germanium and a first material, wherein the first material comprises silicon tin with a concentration of tin between 15% and 20.3%, each nanosheet of the stack of nanosheets having a first end portion, a second end portion, and a channel region interposed between the first end portion and the second end portion;
- thinning the stack of nanosheets in the channel region in a direction perpendicular to a longitudinal axis of the channel region in a plan view;
- removing the layers of the first material in the channel region, wherein the layers of germanium remaining in the channel region;
- and
- forming a gate dielectric on the layers of germanium.
2 more elements
Dependencies are inferred from the claim text.