Methods and structures for altering charge carrier density or bandgap of a topological Dirac semimetal layer
AssigneeMonash University
InventorsMichael Sears Fuhrer, John Thery Hellerstedt, Mark Thomas Edmonds, James Lee Richard Jessee Collins, Chang Liu
Life of this patent
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Abstract
Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate are described.
Claims24
A method of altering a charge carrier density in a topological Dirac semimetal, the method comprising:
- providing a structure including:
- a conductor,
- an insulating layer,
- a topological Dirac semimetal layer separated from the conductor by at least the insulating layer,
- at least one electrode contacting the topological Dirac semimetal layer;
- and
- applying a voltage to the conductor relative to the at least one electrode to subject at least a portion of the topological Dirac semimetal layer to an electric field to alter the charge carrier density of the topological Dirac semimetal layer;
- wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.
A method of altering a band gap of a topological Dirac semimetal, the method comprising:
- providing a structure including:
- a conductor,
- an insulating layer,
- a topological Dirac semimetal layer separated from the conductor by at least the insulating layer,
- at least one electrode contacting the topological Dirac semimetal layer;
- and
- applying a voltage to the conductor relative to the at least one electrode to subject at least a portion of the topological Dirac semimetal layer to an electric field to alter the band gap of the topological Dirac semimetal layer;
- wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.
A structure for altering a charge carrier density in a topological Dirac semimetal, the structure comprising:
- a conductor,
- an insulating layer;
- a topological Dirac semimetal layer separated from the conductor by at least the insulating layer, and
- at least one electrode contacting the topological Dirac semimetal layer,
- wherein the conductor and the at least one electrode are configured to apply an electric field to at least a portion of the topological Dirac semimetal layer to alter the charge carrier density of the topological Dirac semimetal layer;
- wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.
A structure for altering a band gap of a topological Dirac semimetal, the structure comprising:
- a conductor,
- an insulating layer;
- a topological Dirac semimetal layer separated from the conductor by at least the insulating layer, and
- wherein the conductor is configured to apply an electric field to at least a portion of the topological Dirac semimetal layer to alter the band gap of the topological Dirac semimetal layer;
- wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.
Dependencies are inferred from the claim text.