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US 11,239,071 B1Granted
Method of processing semiconductor device
AssigneeNanya Technology Corporation
InventorsJen-I Lai, Chun-Heng Wu
Life of this patent
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Abstract
A method of processing a semiconductor device including following operation is provided. A substrate is provided. The substrate is then processed with a treating solution, in which the treating solution includes liquid carbon dioxide and an additive. The treating solution is then displaced by a supercritical fluid carbon dioxide. The substrate is then dried by transforming the supercritical fluid carbon dioxide to gaseous carbon dioxide.
Claims18
A method of processing a semiconductor device including a substrate, comprising:
- providing a substrate;
- processing the substrate with a treating solution, comprising:
- providing gaseous CxH2x+2 and oxygen to form gaseous carbon dioxide and water vapor, wherein x is 1-4;
- mixing an additive with the gaseous carbon dioxide and water vapor;
- and
- transforming the gaseous carbon dioxide from a gaseous state to a liquid state to form the treating solution, wherein the treating solution comprises liquid carbon dioxide and the additive;
- displacing the treating solution by a supercritical fluid carbon dioxide;
- and
- drying the substrate by transforming the supercritical fluid carbon dioxide to gaseous carbon dioxide.
6 more elements
A method of processing a semiconductor device including a substrate, comprising:
- providing a substrate;
- processing the substrate with a treating solution, comprising:
- providing gaseous CxH2x+2 and oxygen to form gaseous carbon dioxide and water vapor, wherein x is 1-4;
- mixing an additive with the gaseous carbon dioxide and water vapor;
- and
- transforming the gaseous carbon dioxide to supercritical fluid carbon dioxide;
- and
- mixing the additive with the supercritical fluid carbon dioxide to form the treating solution;
- displacing the treating solution by an additional supercritical fluid carbon dioxide;
- and
- drying the substrate by transforming the supercritical fluid carbon dioxide to gaseous carbon dioxide.
8 more elements
Dependencies are inferred from the claim text.