Methods and systems to enhance process uniformity
AssigneeApplied Materials, Inc.
InventorsSaravjeet Singh, Alan Tso, Jingchun Zhang, Zihui Li, Hanshen Zhang, Dmitry Lubomirsky
Life of this patent
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Abstract
A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.
Claims20
A semiconductor processing chamber comprising:
- a support pedestal;
- a remote plasma region;
- and
- a processing region fluidly coupled with the remote plasma region, wherein:
- the processing region is configured to house a substrate on the support pedestal,
- the support pedestal comprises a first material at an interior region of the support pedestal,
- the support pedestal defines at least one recessed ledge, and
- the support pedestal comprises an annular member coupled with a distal portion of the support pedestal, wherein the annular member comprises the first material plated with a second material, wherein the first material comprises aluminum, and wherein the second material is not disposed on surfaces of the annular member in contact with the support pedestal.
A semiconductor processing chamber comprising:
- a remote plasma region;
- and
- a processing region fluidly coupled with the remote plasma region, wherein:
- the processing region is at least partially defined by each of a showerhead, a substrate support pedestal comprising a first material, and a sidewall,
- the support pedestal comprises a temperature control and an annular member coupled with a distal portion of the support pedestal,
- the sidewall includes a liner on an interior chamber surface comprising a second material different from the first material,
- a resistive heater is embedded in the sidewall,
- the pedestal temperature control is configured to maintain the support pedestal at a first temperature, and
- the resistive heater is configured to maintain the annular member at a second temperature greater than the first temperature while the pedestal temperature control maintains the support pedestal at the first temperature.
Dependencies are inferred from the claim text.