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US 11,239,060 B2Granted
Ion beam etching chamber with etching by-product redistributor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTe-Hsien Hsieh, Lee-Chuan Tseng
Life of this patent
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Abstract
In some embodiments, the present disclosure relates to an ion beam etching apparatus. The ion beam etching apparatus includes a substrate holder disposed within a processing chamber and a plasma source in communication with the processing chamber. A vacuum pump is coupled to the processing chamber by way of an inlet. One or more baffles are arranged between the substrate holder and a lower surface of the processing chamber. A by-product redistributor is configured to move a by-product from an etching process from outside of the one or more baffles to directly below the one or more baffles.
Claims20
An ion beam etching apparatus, comprising:
- a substrate holder disposed within a processing chamber;
- a plasma source in communication with the processing chamber;
- a vacuum pump coupled to the processing chamber by way of an inlet;
- a first baffle and a second baffle arranged vertically between the substrate holder and a lower surface of the processing chamber;
- a by-product redistributor configured to move a by-product from an etching process from a first part on the lower surface that is on a first area laterally outside of a second area to a second part of the lower surface that is directly below the first baffle, wherein the second area is directly below the first baffle;
- wherein the substrate holder comprises a surface configured to hold a wafer, and wherein the surface is facing at least a portion of the lower surface of the processing chamber;
- and
- wherein the lower surface of the processing chamber continuously extends from a first end of the lower surface that is directly below the first baffle, to the first area laterally outside of the second area and directly below the surface of the substrate holder, to an opposing second end of the lower surface that is directly below the second baffle, as viewed along a cross-sectional view of the processing chamber.
5 more elements
An ion beam etching apparatus, comprising:
- a substrate holder disposed within a processing chamber and configured to hold a workpiece;
- a plasma source in communication with the processing chamber;
- a vacuum pump operable coupled to the processing chamber;
- a first baffle extending outward from a first sidewall of the processing chamber and vertically between the substrate holder and a lower surface of the processing chamber, as viewed along a cross-sectional view of the processing chamber;
- a second baffle extending outward from a second sidewall of the processing chamber and vertically between the substrate holder and the lower surface of the processing chamber, as viewed along the cross-sectional view, wherein the lower surface of the processing chamber continuously extends from directly below the first baffle to directly below the second baffle, as viewed along the cross-sectional view;
- and
- a by-product redistributor configured to move a by-product from an etching process from a first part of the lower surface of the processing chamber that is on a first area laterally outside of a second area directly below the first baffle to a second part of the lower surface that is directly below the first baffle.
4 more elements
An ion beam etching apparatus, comprising:
- a substrate holder disposed within a processing chamber;
- a plasma source in communication with the processing chamber;
- a vacuum pump coupled to the processing chamber;
- a first baffle and a second baffle respectively having a horizontally extending surface disposed vertically between the substrate holder and a lower surface of the processing chamber, as viewed along a cross-sectional view of the processing chamber;
- a by-product redistributor, comprising:
- a cooler arranged below the lower surface of the processing chamber and directly below the horizontally extending surface of the first or the second baffle;
- and
- a heater arranged below the lower surface of the processing chamber laterally outside of the first and the second baffle;
- wherein the lower surface of the processing chamber continuously extends from directly below the first baffle, to outside of the first baffle and directly below the substrate holder, to directly below the second baffle, as viewed along the cross-sectional view;
- and
- wherein a first part of the lower surface of the processing chamber, which is laterally outside of a second part of the lower surface that is directly below the first baffle, is configured to receive a by-product of an etching process;
- and
- wherein the heater and the cooler are configured to move the by-product from the first part of the lower surface of the processing chamber to the second part of the lower surface of the processing chamber.
10 more elements
Dependencies are inferred from the claim text.