Determine bit error count based on signal and noise characteristics centered at an optimized read voltage

A method, comprising:

• programming a group of memory cells to store a predetermined number of bits per memory cells, the group of memory cells to be read at a plurality of first voltages to retrieve the predetermined number of bits per memory cells from the group of memory cells;
• determining a plurality of calibrated read voltages corresponding to the plurality of first voltages respectively, wherein each respective calibrated read voltage in the plurality of calibrated read voltages is calibrated based on first signal and noise characteristics of the group of memory cells measured by reading the group of memory cells at first test voltages;
• computing, from the first signal and noise characteristics, second signal and noise characteristics of the group of memory cells at the respective calibrated read voltage based on second test voltages;
• and
• estimating, based on the second signal and noise characteristics, a bit error count of data retrievable from the group of memory cells using the plurality of calibrated read voltages.

A memory sub-system, comprising:

• a processing device;
• and
• at least one memory device, the memory device having a group of memory cells formed on an integrated circuit die, the group of memory cells programmed to store a predetermined number of bits per memory cells, the group of memory cells to be read at a plurality of first voltages to retrieve the predetermined number of bits per memory cells from the group of memory cells;
• wherein the processing device is configured to transmit, to the memory device, a command with an address identifying the group of memory cells;
• and
• wherein in response to the command, the memory device is configured to:
• determine a plurality of calibrated read voltages corresponding to the plurality of first voltages respectively, wherein each respective calibrated read voltage in the plurality of calibrated read voltages is calibrated based on first signal and noise characteristics of the group of memory cells measured by reading the group of memory cells at first test voltages;
• compute, from the first signal and noise characteristics, second signal and noise characteristics of the group of memory cells at the respective calibrated read voltage based on second test voltages;
• and
• estimate, based on the second signal and noise characteristics, a bit error count of data retrievable from the group of memory cells using the plurality of calibrated read voltages.