Method of operating nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same

A nonvolatile memory device comprising:

• a memory block including a plurality of memory cells and connected to a plurality of wordlines;
• a row decoder configured to select the plurality of memory cells included in the memory block on a wordline-by-wordline basis;
• and
• a control circuit configured to receive a data write command, to perform a first program operation on some wordlines among the plurality of wordlines connected to the memory block based on the data write command, to detect at least one of the some wordlines on which the first program operation is performed as a no-coupled wordline, and to perform a second program operation on an open wordline on which the first program operation is not performed and adjacent to the no-coupled wordline without the data write command.

A method of operating a memory system including a memory controller and a nonvolatile memory device controlled by the memory controller, the nonvolatile memory device including a memory block that includes a plurality of memory cells and is connected to a first wordline through an N-th wordline, where N is a natural number greater than or equal to two, the method comprising:

• transmitting, by the memory controller, a data write command, a write address and target data to be written to the nonvolatile memory device;
• performing, by the nonvolatile memory device, a normal program operation on memory cells connected to the first wordline through an X-th wordline among the first through N-th wordlines connected to the memory block based on the data write command, the write address and the target data, where X is a natural number greater than or equal to one and less than or equal to (N−1);
• detecting, by the nonvolatile memory device, the X-th wordline among the first through N-th wordlines on which the normal program operation is performed as a no-coupled wordline, the X-th wordline being a last programmed wordline;
• performing, by the nonvolatile memory device, a dummy program operation on memory cells connected to an (X+1)-th wordline on which the normal program operation is not performed and adjacent to the X-th wordline without the data write command;
• transmitting, by the memory controller, a data read command and a read address corresponding to the write address to the nonvolatile memory device;
• performing, by the nonvolatile memory device, a read operation on all of the memory cells connected to the first through X-th wordlines on which the normal program operation is performed based on the data read command, the read address and a read voltage having a same level;
• and
• transmitting, by the nonvolatile memory device, the target data to the memory controller as a result of the read operation.