Read-write circuit and read-write method of memristor
AssigneeHuazhong University of Science and Technology
InventorsXingsheng Wang, Enming Huang, Xiangshui Miao
Life of this patent
Estimating the term…
Loading patent…
AssigneeHuazhong University of Science and Technology
InventorsXingsheng Wang, Enming Huang, Xiangshui Miao
Estimating the term…
A read-write circuit mainly includes a read circuit and a write circuit. The write circuit comprises: a first voltage selector and a first voltage follower circuit that is electrically connected to the memristor storage array. The read-write circuit further includes a second voltage selector and a second voltage follower circuit that is electrically connected to the memristor storage array. Voltage stable following during bipolar writing is selected through the foregoing selector. Meanwhile, the reading circuit is provided with a variable resistor to select an access mode. The actual read-out voltage and the output voltage passing through the reference resistor under the same read voltage are input into a differential amplifier to obtain read-out data.
A memristor read-write circuit, wherein the read-write circuit comprises a voltage follower circuit arranged for a read-write circuit voltage applied to a memristor storage unit, and the voltage follower circuit is connected to a selective voltage according to a control signal, or to a break-over voltage corresponding to the selective voltage and forming a read-write operating circuit with the memristor storage unit to achieve a switching effect on the read-write circuit.
Dependencies are inferred from the claim text.