Memory device having program current adjustible based on detected holding voltage

A memory device comprising:

• a memory cell array including a plurality of memory cells disposed at intersections of a plurality of wordlines and a plurality of bitlines;
• a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell in response to an address;
• and
• a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage,
• wherein the holding voltage is a voltage that prevents the selected memory cell from being turned off, and
• wherein the programming circuit determines a time when the selected memory cell reaches the holding voltage during a pre-reading period and supplies a program current, having a magnitude adjusted according to the determined time, to the selected memory cell during a programming period following the pre-reading period.

A memory device comprising:

• a memory cell array including a plurality of memory cells disposed at intersections of a plurality of wordlines and a plurality of bitlines;
• a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell;
• and
• a programming circuit configured to input a holding current and a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage, wherein the holding current prevents the selected memory cell from being turned off,
• wherein the decoder circuit supplies a bias voltage to a selected wordline among the wordlines and a selected bitline among the bitlines, connected to the selected memory cell, during a cell turn-on period to set the selected memory cell to a turned-on state, and wherein the programming circuit supplies the holding current to the selected memory cell to maintain the selected memory cell in the turned-on state during a holding period following the cell turn-on period, detects the holding voltage of the selected memory cell after stopping the supply of the holding current and during a programming period following the holding period, and supplies a program current, having a magnitude adjusted by the holding voltage, to the selected memory cell.