Semiconductor storage device
AssigneeKioxia Corporation
InventorMasaharu Wada
Life of this patent
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Abstract
According to one embodiment, a semiconductor storage device includes a first stacked portion including a first peripheral circuit and a second stacked portion above the first stacked portion. The second stacked portion including a memory cell, a word line connected to the memory cell, a bit line connected to the memory cell and the first peripheral circuit, and at least one of a second peripheral circuit connected to the bit line and a third peripheral circuit connected to the word line. The at least one of the second or third peripheral circuits including a field effect transistor having a channel layer containing an oxide semiconductor.
Claims12
A semiconductor storage device, comprising:
- a first stacked portion including a first peripheral circuit;
- and
- a second stacked portion above the first stacked portion and including a memory cell, a word line connected to the memory cell, a bit line connected to the memory cell and the first peripheral circuit, and at least one of a second peripheral circuit connected to the bit line or a third peripheral circuit connected to the word line, wherein
- the at least one of the second peripheral circuit or the third peripheral circuit includes a field effect transistor having a channel layer containing an oxide semiconductor,
- the first peripheral circuit comprises a sense amplifier,
- the third peripheral circuit comprises a word line driving circuit connected to the word line, and
- the word line driving circuit is above the word line.
Dependencies are inferred from the claim text.