Memory system and operating method thereof
AssigneeSK hynix Inc.
InventorsNam Oh Hwang, Yong-Tae Kim, Soong-Sun Shin, Duck-Hoi Koo
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Abstract
There are provided a memory system and an operating method thereof. A memory system includes: a plurality of storage regions, each including a plurality of memory cells; and a controller configured to provide a plurality of read retry sets, determine an applying order of the plurality of read retry sets based on characteristics of a read error occurred in a first storage region among the plurality of storage regions, and apply at least one of the read retry sets, based on the applying order, for a read retry operation performed on the first storage region.
Claims12
A memory system comprising:
- a memory device configured to include a plurality of memory blocks each including memory cells;
- and
- a memory controller configured to calculate numbers of memory cells included in a selected page among the plurality of memory blocks, respectively included in a plurality of threshold voltage regions divided by first read voltages and second read voltages, to determine a read retry set to be used to read data stored in the selected page among a plurality of read retry sets based on the numbers of memory cells respectively included in the plurality of threshold voltage regions, and to control the memory device to perform a read retry operation using the read retry set.
A method for memory controller controlling a memory device including a plurality of memory blocks including memory cells, respectively, the method comprising:
- providing a user read command;
- receiving first data and second data, which are acquired by read operations on a selected page among the plurality of memory blocks, using first read voltages and second read voltages, in response to the user read command;
- counting numbers of memory cells of the selected page respectively included in a plurality of threshold voltage regions divided by the first read voltages and the second read voltages;
- selecting a read retry set among a plurality of read retry sets based on the numbers of memory cells;
- and
- controlling the memory device to perform a read retry operation using the read retry set.
Dependencies are inferred from the claim text.