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US 11,237,473 B2Granted
Physical vapor deposition system and processes
AssigneeApplied Materials, Inc.
InventorsVibhu Jindal, Wen Xiao, Sanjay Bhat
Life of this patent
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Abstract
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.
Claims13
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate;
- a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs including a silicon layer and a molybdenum layer, and an interface layer between the silicon layer and the molybdenum layer, the interface layer comprising Si3N4;
- a capping layer on the multilayer stack of reflecting layers;
- and
- an absorber layer on the capping layer.
2 more elements
Dependencies are inferred from the claim text.