Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
AssigneeHoya Corporation
InventorsYohei Ikebe, Junichi Horikawa, Takahiro Onoue, Mizuki Kataoka
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Abstract
Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
Claims20
A reflective mask blank comprising:
- a substrate;
- a multilayer reflective film formed on the substrate;
- and
- an absorber film formed on the multilayer reflective film,
- wherein the absorber film is made of a material that has an amorphous structure and that comprises at least one element selected from cobalt (Co) and nickel (Ni).
A reflective mask comprising:
- a substrate;
- a multilayer reflective film formed on the substrate;
- and
- an absorber pattern formed on the multilayer reflective film,
- wherein the absorber pattern is made of a material that has an amorphous structure and that comprises at least one element selected from cobalt (Co) and nickel (Ni).
A method of manufacturing a reflective mask, the method comprising:
- preparing a reflective mask blank comprising:
- a substrate;
- a multilayer reflective film formed on the substrate;
- and
- an absorber film formed on the multilayer reflective film, wherein the absorber film is made of a material that has an amorphous structure and that comprises at least one element selected from cobalt (Co) and nickel (Ni), and
- forming an absorber pattern by patterning the absorber film of the reflective mask blank by dry etching using at least one chlorine-based gas.
Dependencies are inferred from the claim text.