Display panel and manufacture method thereof, and display apparatus

A manufacture method of a display panel, comprising:

• providing a first substrate;
• and
• providing a second substrate and positioning the second substrate opposite to the first substrate,
• wherein the first substrate comprises a display region and a peripheral region, a conduction section is in the peripheral region of the first substrate, and the conduction section is electrically connected with a grounded section;
• and
• the second substrate comprises a display region and a peripheral region, wherein a black matrix is at least in the peripheral area of the second substrate, and the black matrix is electrically connected with the conduction section,
• wherein the conduction section comprises at least one first conductive layer, and the at least one first conductive layer is respectively in a same layer as a conductive layer in the display region of the first substrate,
• wherein the conductive layer in the display region of the first substrate comprises a light shielding layer, and the first conductive layer is in a same layer as the light shielding layer.

A display panel, comprising:

• a first substrate and a second substrate, arranged opposite to each other,
• wherein the first substrate comprises a display region and a peripheral region, a conduction section is in the peripheral region of the first substrate, and the conduction section is electrically connected with a grounded section;
• and
• the second substrate comprises a display region and a peripheral region, wherein a black matrix is at least in the peripheral region of the second substrate, and the black matrix is electrically connected with the conduction section,
• wherein the conduction section comprises at least one first conductive layer, and the at least one first conductive layer is respectively in a same layer as a conductive layer in the display region of the first substrate,
• a thin film transistor is in the display region of the first substrate, the thin film transistor comprises a gate electrode and a source/drain electrode, and
• the first conductive layer is in a same layer as a metal layer where the source/drain electrode is located.