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US 11,237,327 B2Granted
Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate
AssigneeMicron Technology, Inc.
InventorRoy E. Meade
Life of this patent
Estimating the term…
Abstract
Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.
Claims19
A method of forming an integrated structure, the method comprising:
- forming a shallow trench isolation region in a first semiconductor substrate;
- filing a trench of the shallow trench isolation region with a first dielectric material having a first index of refraction;
- attaching a second substrate to the first semiconductor substrate, wherein the second substrate includes a second dielectric material and a semiconductor material over the second dielectric material, wherein the semiconductor material has a second index of refraction greater than the first index of refraction, and wherein the second dielectric material faces the first substrate;
- and
- forming a waveguide from the second substrate after attaching the second substrate to the first semiconductor substrate by thinning the semiconductor material and subsequently patterning the semiconductor material,
- wherein the waveguide is located over the shallow trench isolation region, and
- wherein the first dielectric material comprises a solid.
4 more elements
A method of forming a silicon-on-insulator structure, the method comprising:
- forming a trench in a first semiconductor substrate;
- filing the trench with a first dielectric material having a first index of refraction to form a shallow trench isolation region;
- attaching a second substrate to the first semiconductor substrate, wherein the second substrate includes a second dielectric material and a semiconductor material over the second dielectric material, wherein the semiconductor material has a second index of refraction greater than the first index of refraction, and wherein the second dielectric material faces the first substrate;
- and
- forming a waveguide from the second substrate after attaching the second substrate to the first semiconductor substrate by thinning the semiconductor material and subsequently patterning the semiconductor material,
- wherein the waveguide is aligned with the shallow trench isolation region, and
- wherein the first dielectric material comprises a solid.
4 more elements
Dependencies are inferred from the claim text.