Magnetic flux concentrator for in-plane direction magnetic field concentration
AssigneeTexas Instruments Incorporated
InventorsJo Bito, Benjamin Stassen Cook, Dok Won Lee, Keith Ryan Green, Ricky Alan Jackson, William David French
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Abstract
A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.
Claims8
A structure, comprising:
- a substrate comprising a surface;
- a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate;
- a patterned magnetic concentrator positioned above the surface of the substrate;
- and
- a protective overcoat layer positioned above the magnetic concentrator;
- wherein the patterned magnetic concentrator comprises multiple magnetic layers;
- wherein the multiple magnetic layers comprise a composition selected from the group consisting of Ni, Co, Fe, NiFe, CoNiFe, CoTaZr, and combinations thereof, and wherein the multiple magnetic layers are separated from each other via an insulating layer comprising a composition selected from the group consisting of AlN, Al2O3, and combinations thereof.
A structure, comprising:
- a substrate comprising a surface;
- a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate;
- a patterned magnetic concentrator positioned above the surface of the substrate;
- and
- a protective overcoat layer positioned above the magnetic concentrator;
- wherein the patterned magnetic concentrator comprises multiple magnetic layers;
- wherein the patterned magnetic concentrator further comprises an electrically conducting metal layer positioned below the multiple magnetic layers, and wherein the electrically conducting metal layer comprises a composition selected from the group consisting of Ti, W, Cu, and combinations thereof.
A structure, comprising:
- a substrate comprising a surface;
- a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate;
- a patterned magnetic concentrator positioned above the surface of the substrate;
- and
- a protective overcoat layer positioned above the magnetic concentrator;
- wherein the patterned magnetic concentrator comprises multiple magnetic layers;
- wherein the patterned magnetic concentrator further comprises an outer layer at least partially encasing the multiple magnetic layers, and wherein the outer layer comprises a composition selected from the group consisting of Ti, SiN, SiO2, SiON, and combinations thereof.
A structure, comprising:
- a substrate comprising a surface;
- a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate;
- a patterned magnetic concentrator positioned above the surface of the substrate;
- a protective overcoat layer positioned above the magnetic concentrator;
- and
- a vertical-type Hall sensor positioned within the substrate and below the surface of the substrate, wherein the patterned magnetic concentrator comprises a gap at an inner portion of the patterned magnetic concentrator, wherein the vertical-type Hall sensor is positioned below the gap, and wherein the horizontal-type Hall sensor comprises multiple Hall sensors which are positioned below outer-edge portions, respectively, of the patterned magnetic concentrator.
A method of forming a structure, the method comprising:
- forming a substrate comprising a surface;
- positioning a horizontal-type Hall sensor within the substrate and below the surface of the substrate;
- forming a magnetic concentrator above the surface of the substrate;
- and
- forming a protective overcoat layer above the magnetic concentrator;
- wherein the magnetic concentrator comprises multiple magnetic layers;
- wherein the multiple magnetic layers comprise a composition selected from the group consisting of Ni, Co, Fe, NiFe, CoNiFe, CoTaZr, and combinations thereof, and wherein the multiple magnetic layers are separated from each other via an insulating layer comprising a composition selected from the group consisting of AlN, Al2O3, and combinations thereof.
A method of forming a structure, the method comprising:
- forming a substrate comprising a surface;
- positioning a horizontal-type Hall sensor within the substrate and below the surface of the substrate;
- forming a magnetic concentrator above the surface of the substrate;
- and
- forming a protective overcoat layer above the magnetic concentrator;
- wherein the magnetic concentrator comprises multiple magnetic layers;
- wherein the magnetic concentrator further comprises an electrically conducting metal layer positioned below the multiple magnetic layers, and wherein the electrically conducting metal layer comprises a composition selected from the group consisting of Ti, W, Cu, and combinations thereof.
A method of forming a structure, the method comprising:
- forming a substrate comprising a surface;
- positioning a horizontal-type Hall sensor within the substrate and below the surface of the substrate;
- forming a magnetic concentrator above the surface of the substrate;
- and
- forming a protective overcoat layer above the magnetic concentrator;
- wherein the magnetic concentrator comprises multiple magnetic layers;
- wherein the magnetic concentrator further comprises an outer layer at least partially encasing the multiple magnetic layers, and wherein the outer layer comprises a composition selected from the group consisting of Ti, SiN, SiO2, SiON, and combinations thereof.
A method of forming a structure, the method comprising:
- forming a substrate comprising a surface;
- positioning a horizontal-type Hall sensor within the substrate and below the surface of the substrate;
- forming a magnetic concentrator above the surface of the substrate;
- forming a protective overcoat layer above the magnetic concentrator;
- and
- positioning a vertical-type Hall sensor within the substrate and below the surface of the substrate, wherein the patterned magnetic concentrator comprises a gap at an inner portion of the patterned magnetic concentrator, wherein the vertical-type Hall sensor is positioned below the gap, and wherein the horizontal-type Hall sensor comprises multiple Hall sensors which are positioned below outer-edge portions, respectively, of the patterned magnetic concentrator.
Dependencies are inferred from the claim text.