Back to results
US 11,237,098 B2Granted
MEMS gas sensor
AssigneeInfineon Technologies AG
InventorDavid Tumpold
Life of this patent
Estimating the term…
Abstract
A MEMS gas sensor includes a photoacoustic sensor including a thermal emitter and an acoustic transducer, the thermal emitter and the acoustic transducer being inside a mutual measurement cavity. The thermal emitter includes a semiconductor substrate and a heating structure supported by the semiconductor substrate. The heating structure includes a heating element. The MEMS gas sensor further includes a chemical sensor thermally coupled to the heating element, and the chemical sensor including a gas adsorbing layer.
Claims27
A MEMS gas sensor, comprising:
- a photoacoustic sensor comprising a thermal emitter and an acoustic transducer, the thermal emitter and the acoustic transducer being arranged inside a mutual measurement cavity,
- wherein the thermal emitter comprises a semiconductor substrate and a heating structure being supported by the semiconductor substrate, the heating structure including a heating element, and
- a chemical sensor thermally coupled to the heating element, the chemical sensor including a gas adsorbing layer,
- wherein the thermal emitter comprises a predetermined temperature profile according to which the thermal emitter comprises at least three different temperature zones including a first temperature zone, a second temperature zone, and a third temperature zone, and wherein temperature in the first and second temperature zones varies less than temperature in the third temperature zone.
1 more element
A thermal emitter comprising:
- a semiconductor substrate and a heating structure being supported by the semiconductor substrate, the heating structure including a heating element supported by the heating structure, and
- a chemical sensor thermally coupled to the heating element, the chemical sensor including a gas adsorbing layer,
- wherein the thermal emitter comprises a predetermined temperature profile according to which the thermal emitter comprises at least three different temperature zones including a first temperature zone, a second temperature zone, and a third temperature zone, and wherein temperature in the first and second temperature zones varies less than temperature in the third temperature zone.
A MEMS gas sensor, comprising:
- a photoacoustic sensor comprising a thermal emitter and an acoustic transducer, the thermal emitter and the acoustic transducer being arranged inside a mutual measurement cavity,
- wherein the thermal emitter comprises a semiconductor substrate and a heating structure being supported by the semiconductor substrate, the heating structure including a heating element, and
- a chemical sensor thermally coupled to the heating element, the chemical sensor including a gas adsorbing layer,
- wherein the thermal emitter comprises a predetermined temperature profile according to which the heating element is configured to heat a first portion of the thermal emitter to a first temperature and to heat a second portion of the thermal emitter to a second temperature being lower than the first temperature, wherein the adsorbing layer is arranged at the second portion of the thermal emitter, and
- wherein the heating element is configured to heat the first portion of the thermal emitter to the first temperature and to heat the second portion of the thermal emitter to the second temperature during the same activation time.
2 more elements
Dependencies are inferred from the claim text.