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US 11,236,439 B2Granted
Non-polar or semi-polar GaN wafer
AssigneeMitsubishi Chemical Corporation
InventorsYusuke Tsukada, Masayuki Tashiro, Hideo Namita
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Abstract
A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.
Claims8
A method for producing a GaN crystal, comprising:
- planarizing front surfaces of a plurality of tiling GaN seeds arranged side by side on a surface of a plate to produce a plurality of planarized tiling GaN seeds;
- forming an aggregated seed by arranging the plurality of planarized tiling GaN seeds side by side on a susceptor of an HVPE apparatus in the same arrangement as when arranged on the plate during planarizing, with the front planarized surfaces facing upward;
- and
- growing a bulk GaN crystal epitaxially on the aggregated seed by an HVPE method.
1 more element
Dependencies are inferred from the claim text.