Method of processing substrate
AssigneeTokyo Electron Limited
InventorsKennan Mo, Nuri Choi, Kouichi Sekido, Katsumasa Yamaguchi, Eiichi Komori
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AssigneeTokyo Electron Limited
InventorsKennan Mo, Nuri Choi, Kouichi Sekido, Katsumasa Yamaguchi, Eiichi Komori
Estimating the term…
A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.
A method of processing each of a plurality of substrates by supplying a carrier gas having a flow rate adjusted by a mass flow controller to a raw material container, and supplying a vaporized raw material obtained by vaporizing a solid or liquid raw material inside the raw material container together with the carrier gas as a raw material gas to a substrate processing part via a raw material gas supply path in which a mass flow meter is installed, the method comprising:
Dependencies are inferred from the claim text.