Multilayer stack for the growth of carbon nanotubes by chemical vapor deposition
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsYoann Dini, Jean Dijon
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Abstract
The subject of the invention is the use, as catalyst support sublayer in a process for growing carbon nanotubes by chemical vapour deposition (CVD), of a multilayer stack formed of alternating layers of silica and of alumina, each of the layers having a thickness of less than or equal to 10 nm and consisting of one or more superposed atomic monolayer(s). It also relates to a multilayer structure comprising a substrate which has, on at least one of its faces, such a multilayer stack, and also to the use thereof for the growth of a mat of carbon nanotubes, which are in particular spinnable, by chemical vapour deposition, preferably hot-filament chemical vapour deposition.
Claims25
A multilayer structure comprising a substrate which has, on at least a first face of the substrate, a multilayer stack,
- wherein the multilayer stack comprises alternating layers of silica and alumina,
- wherein each of the alternating layers has a thickness of less than or equal to 10 nm,
- wherein each of the alternating layers consists of superposed atomic monolayer(s), and
- wherein an outer layer of the alternating layers of silica and alumina is made of silica or alumina, and
- wherein the outer layer defines a second face of the multilayer stack and has directly deposited thereupon a layer of carbon nanotube growth catalyst material(s).
Dependencies are inferred from the claim text.