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US 11,236,418 B2Granted
Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing
AssigneeApplied Materials, Inc.
InventorsRui Cheng, Abhijit Basu Mallick, Pramit Manna
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Abstract
Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.
Claims20
A method comprising:
- depositing a first film in a substrate feature, the first film forming on a bottom of the feature and sidewall of the feature only on an upper portion of the sidewall adjacent a substrate surface, the feature extending a distance from the substrate surface, the feature formed between two spaced oxide layers so that the sidewalls of the feature are the oxide layers and the bottom of the feature is a different material than the spaced oxide layers;
- etching the first film from the sidewalls of the feature;
- and
- treating the first film in the bottom of the feature to form a second film in the feature.
1 more element
Dependencies are inferred from the claim text.