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US 11,236,416 B2Granted
Sputtering target and production method therefor
AssigneeJX Nippon Mining & Metals Corporation
InventorsYasushi Morii, Yoshimasa Koido
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Abstract
A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.
Claims9
A sputtering target comprising an alloy of Al and Sc and containing from 25 at. % to 50 at. % of Sc, the sputtering target having an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less, wherein:
- the variation in Vickers hardness (Hv) is calculated by measuring Vickers hardness at a plurality of measurement points on a target surface, determining an average value and standard deviation of measured values at the measurement points, dividing the standard deviation by the average value, and expressing in a percentage, and
- the sputtering target comprises at least one phase selected from the group consisting of an Al—Sc phase and an Al2—Sc phase.
A method for producing a sputtering target, comprising:
- a step of melting, in an inert gas or vacuum atmosphere, an Al raw material together with a Sc raw material having an oxygen content of 3000 ppm by mass or less and then cooling to obtain an Al—Sc alloy ingot containing from 25 at. % to 50 at. % of Sc;
- and
- a forging step of applying a pressure to the ingot to subject the ingot to plastic working,
- wherein the sputtering target comprises at least one phase selected from the group consisting of an Al—Sc phase and an Al2—Sc phase.
1 more element
Dependencies are inferred from the claim text.