Thermal conductive silicone composition, semiconductor device, and method for manufacturing semiconductor device
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShota Akiba, Kenichi Tsuji, Kunihiro Yamada
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShota Akiba, Kenichi Tsuji, Kunihiro Yamada
Estimating the term…
Provided is a thermal conductive silicone composition containing: (A) an organopolysiloxane having a kinetic viscosity of 10 to 100,000 mm2/s at 25° C., and represented by the following average composition formula (1) R1aSiO(4-a)/2 (1) wherein R1 represents a hydrogen atom or a monovalent hydrocarbon group, and a represents a number satisfying 1.8≤a≤2.2; (B) silver nanoparticles having an average particle size of 3 to 600 nm; (C) a thermal conductive filler other than the component (B), having an average particle size of 0.7 to 100 μm and a thermal conductivity of 10 W/m° C. or higher; and (D) a catalyst selected from the group consisting of a platinum based catalyst, an organic peroxide and a catalyst for condensation reaction.
A thermal conductive silicone composition comprising:
A method for manufacturing a semiconductor device, comprising a step of heating the thermal conductive silicone composition as set forth in claim 1 to 80° C. or higher with the thermal conductive silicone composition being sandwiched between a heat-generating electronic part and a heat dissipator, and with a pressure of 0.01 MPa or higher being applied thereto.
A thermal conductive silicone composition comprising:
A method for manufacturing a semiconductor device, comprising a step of heating the thermal conductive silicone composition as set forth in claim 16 to 80° C. or higher with the thermal conductive silicone composition being sandwiched between a heat-generating electronic part and a heat dissipator, and with a pressure of 0.01 MPa or higher being applied thereto.
Dependencies are inferred from the claim text.