Auto-precharge for a memory bank stack
AssigneeMicron Technology, Inc.
InventorsKallol Mazumder, Harish V. Gadamsetty
Life of this patent
Estimating the term…
Abstract
Devices and methods include a command interface configured to receive commands, such as a write with an automatic precharge. A bank-specific decoder decodes the write with an automatic precharge command for a corresponding memory bank and outputs a write auto-precharge (WrAP) signal. This WrAP signal has not been adjusted for a write recovery time for the memory bank. Accordingly, bank processing circuitry in a bank receiving the WrAP signal uses the WrAP to cause its internal lockout circuitry to apply a tWR lockout based at least in part on a mode register setting and on the WrAP signal indicating receipt of the write with an automatic precharge command.
Claims21
A semiconductor device comprising:
- a command interface configured to receive a write with an automatic precharge command;
- a bank-specific decoder configured to decode the write with an automatic precharge command for a memory bank and to output a write auto-precharge (WrAP) signal;
- and
- bank processing circuitry that comprises lockout circuitry, wherein the bank processing circuitry is configured to receive the WrAP signal and to apply a write recovery time (tWR) lockout after receipt of the WrAP signal and based at least in part on the WrAP signal indicating receipt of the write with an automatic precharge command.
A method, comprising:
- receiving, at a command interface of a memory device, a write auto-precharge (Wr-AutoP) command;
- transmitting the Wr-AutoP command to a decoder;
- decoding the Wr-AutoP command in the decoder;
- in the decoder, generating and transmitting a Wr-AutoP signal to bank processing circuitry in a memory bank targeted for the Wr-AutoP command;
- and
- in response to receiving the Wr-AutoP signal at the bank processing circuitry, applying a write recovery time (tWR) lockout after receipt of the Wr-AutoP signal for the memory bank based at least in part on the Wr-AutoP signal.
A memory device, comprising:
- a command interface configured to receive a write auto-precharge command from a host device;
- and
- a plurality of memory banks, each memory bank comprising:
- a bank-specific decoder configured to generate a write auto-precharge signal (WrAP signal) in response to decoding a write auto-precharge command targeting the respective memory bank;
- and
- bank processing circuitry configured to receive the WrAP signal and to reuse row address strobe time (tRAS) lockout circuitry to apply a write recovery time (tWR) lockout in response to receiving the WrAP signal.
Dependencies are inferred from the claim text.