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US 11,232,825 B2Granted
Capacitor structure and method of forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLiang Chen, Cheng Gan, Xin Wu, Wei Liu
Life of this patent
Estimating the term…
Abstract
A capacitor is provided. The capacitor includes a substrate that has opposing first and second main surfaces. The capacitor also includes at least two conductive plates that are formed in the substrate and extend from the first main surface to the second main surface of the substrate. The capacitor further includes at least one insulating structure that is formed between two adjacent conductive plates of the at least two conductive plates and extends from the first main surface to the second main surface.
Claims18
A capacitor, comprising:
- a substrate having opposing first and second main surfaces, and a doped region that is doped with first dopants at a first dopant concentration;
- at least two conductive plates that are formed from the doped region of the substrate, doped with the first dopants at the first dopant concentration, and extend from the first main surface to the second main surface of the substrate;
- at least one insulating structure that is formed between two adjacent conductive plates of the at least two conductive plates and extends from the first main surface to the second main surface;
- a dielectric layer formed over the first main surface of the substrate, the dielectric layer including a top surface and a bottom surface, the bottom surface being in contact with the first main surface;
- and
- a plurality of contacts formed in the dielectric layer, the plurality of contacts further extending into the at least two conductive plates.
3 more elements
An integrated circuit (IC) chip, comprising:
- a substrate having opposing first and second main surfaces, and a doped region that is doped with first dopants at a first dopant concentration;
- transistors formed at a first location of the first main surface of the substrate;
- and
- a capacitor formed at a second location of the substrate, the capacitor comprising:
- at least two conductive plates that are formed from the doped region of the substrate, doped with the first dopants at the first dopant concentration, and extend from the first main surface to the second main surface of the substrate;
- at least one insulating structure that is formed between two adjacent conductive plates of the at least two conductive plates and extends from the first main surface to the second main surface;
- a dielectric layer formed over the first main surface of the substrate, the dielectric layer including a top surface and a bottom surface, the bottom surface being in contact with the first main surface;
- and
- a plurality of contacts formed in the dielectric layer, the plurality of contacts further extending into the at least two conductive plates.
6 more elements
A method, comprising:
- forming a doped region in a substrate from a first main surface, the doped region being doped with first dopants at a first dopant concentration;
- forming a dielectric layer over the first main surface and the doped region of the substrate;
- forming a plurality of contacts in the dielectric layer, the plurality of contacts extending into the doped region,
- removing a portion of the substrate from a second main surface;
- forming a plurality of trenches and conductive lines in the doped region of the substrate through etching the doped region of the substrate from the second main surface, wherein the trenches pass through the substrate to expose the dielectric layer, the conductive lines are spaced apart from each other by the trenches and formed from the doped region that is doped with the first dopants at the first dopant concentration, and the contacts are in direct contact with the conductive lines;
- and
- filling the plurality of trenches with a dielectric material.
4 more elements
Dependencies are inferred from the claim text.