Non-volatile semiconductor storage device

A non-volatile semiconductor memory device comprising:

• one or more first pads, each transmitting/receiving a data signal transmitted via each of one or more first signal lines to/from a memory controller;
• one or more second pads, each transmitting/receiving a strobe signal transmitted via each of one or more second signal lines to/from the memory controller, the strobe signal specifying a timing of transmitting/receiving the data signal;
• a third pad receiving an output instruction signal via a third signal line from the memory controller, the output instruction signal instructing a transmission of the data signal;
• an output control circuit generating the strobe signal based on the output instruction signal;
• a detection circuit detecting a first difference between a first timing and a reference, the detection circuit being connected to each of the one or more first signal lines, the data signal changing at the first timing;
• and
• one or more first correction circuits, each performing a first calibration operation based on the first difference, each of the one or more first correction circuit being connected to each of the one or more first signal lines,
• wherein the non-volatile semiconductor memory device
• outputs the data signal from each of the one or more first pads to the memory, controller,
• outputs the strobe signal from each of the one or more second pads to the memory controller,
• performs the first calibration operation calibrating the data signal, and
• performs a second calibration operation calibrating the strobe signal, based on a toggle timing of the strobe signal associated with the output instruction signal output from the memory controller upon receiving a command from the memory controller.