Stacked memory device and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJoonsik Sohn, Hyunjoong Kim, Woongjae Song, Soowoong Ahn, Seunghyun Cho, Jihyun Choi
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Abstract
According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.
Claims19
A method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method comprising:
- receiving a command and an address from a memory controller;
- determining a stack ID indicating a subset of the plurality of memory dies by decoding the address;
- and
- accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent,
- wherein the accessing of the at least two memory dies comprises sequentially accessing the at least two memory dies.
A method of operating a stacked memory device including a plurality of memory chips stacked in a vertical direction, the method comprising:
- receiving a command and an address from a memory controller;
- determining chip IDs each indicating one memory chip among the plurality of memory chips by decoding the address;
- and
- sequentially accessing at least two memory chips among the plurality of memory chips based on the chip IDs such that the at least two memory chips are non-adjacent,
- wherein
- the receiving the command and the address comprises:
- receiving a first command and a first address from the memory controller;
- and
- receiving a second command and a second address from the memory controller after the receiving the first command and the first address.
A stacked memory device comprising a plurality of memory dies stacked in a vertical direction,
- wherein the plurality of memory dies comprise:
- a first memory die;
- a third memory die electrically connected to the first memory die through first TSVs;
- and
- a second memory die between the first memory die and the third memory die,
- wherein the second memory die is not connected to the first TSVs.
Dependencies are inferred from the claim text.