Pellicle and method for manufacturing pellicle
AssigneeAir Water Inc.
InventorsHidehiko Oku, Ichiro Hide
Life of this patent
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Abstract
A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.
Claims20
A pellicle comprising:
- a supporting member with a ring-like and planar shape and containing Si, and
- a pellicle film formed on one principal surface of the supporting member, wherein
- the pellicle film includes a SiC film having a thickness of 10 nanometers or more and 100 nanometers or less, and
- the SiC film includes
- a first SiC film formed on the one principal surface of the supporting member and having a first average carbon concentration, and
- a second SiC film formed on one principal surface of the first SiC film and having a second average carbon concentration different from the first average carbon concentration.
A method for manufacturing a pellicle comprising:
- a step to prepare a supporting member containing Si, and
- a step to form a pellicle film on one principal surface of the supporting member, wherein
- the step to form the pellicle film includes
- a step to form a first SiC film having a first average carbon concentration on one principal surface of the supporting member, by carbonizing Si of the one principal surface of the supporting member, and
- a step to form a second SiC film having a second average carbon concentration different from the first average carbon concentration on one principal surface of the first SiC film, wherein the method further comprises
- a step to exposes at least a part of another principal surface of the first SiC film by wet etching.
Dependencies are inferred from the claim text.