Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

A mask blank having a structure in which a light-semitransmissive film, and a light shielding film are layered in the stated order on a transparent substrate,

• the light-semitransmissive film at least containing silicon,
• the light shielding film comprising a layered structure of a lower layer and an upper layer,
• the light shielding film containing at least chromium,
• the light shielding film has a thickness of 35 nm or more and 55 nm or less,
• the lower layer has a thickness of 84% or more and 97% or less with respect to a total thickness which is a combined thickness of both the lower layer and the upper layer,
• the lower layer having a content of the chromium of less than 60 atom %, and a content of oxygen of 20 atom % or more,
• the upper layer having a content of the chromium of 65 atom % or more, and a content of oxygen of less than 20 atom %,
• the upper layer having a thickness of 1.5 nm or more and 8 nm or less,
• wherein the lower layer has a higher content of oxygen than that of the upper layer,
• wherein the lower layer has a lower content of chromium than that of the upper layer,
• wherein a layered structure of the light-semitransmissive film and the light shielding film has a transmittance of 50% or less with respect to light having a wavelength in at least a part of a wavelength region of from 800 nm to 900 nm.