Radiation sensor

A method for sensing radiation, the method comprises:

• converting, by a first group of radiation sensing diodes that are coupled to each other, sensed radiation that is sensed by the first group to a first output signal;
• changing a state of a first isolated conductive structure using the first output signal;
• wherein the first isolated conductive structure comprises a floating gate of a first transistor;
• converting, by a second group of radiation sensing diodes that are coupled to each other, sensed radiation that is sensed by the second group to a second output signal;
• and
• changing a state, under a control of the first transistor, of a second isolated conductive structure using the second output signal;
• wherein the second isolated conductive structure comprises a floating gate of a second transistor.

A radiation sensor, comprising:

• a first layer that comprises a first isolated conductive structure that is a single polysilicon layer, the first isolated conductive structure comprises a floating gate of the first transistor;
• a first insulating layer;
• a silicon layer that comprises (a) a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal;
• wherein the first insulating layer is positioned between the first layer and the silicon layer;
• an oxide layer;
• and
• a silicon substrate;
• wherein the oxide layer is positioned between the silicon layer and the silicon substrate.