Back to results
US 11,231,362 B1Granted
Multi-environment polarized infrared reflectometer for semiconductor metrology
AssigneeKLA Corporation
InventorsGuorong V. Zhuang, Shankar Krishnan, David Y. Wang, Xuefeng Liu, Mengmeng Ye, Dawei Hu
Life of this patent
Estimating the term…
Abstract
A system includes a light source, a Fourier transform infrared reflectometer (FTIR) spectrometer, and broadband reflectometer optics. The system is configured to measure polarized light and unpolarized reflectivities in a wavelength range from 2 μm to 20 μm. The light source can be a laser-driven light source. The spectroscopic reflectometer can include a single channel or two channels.
Claims20
A system comprising:
- a light source;
- a stage configured to hold a wafer;
- a Fourier transform infrared reflectometer (FTIR) spectrometer configured to receive light from the light source;
- and
- broadband reflectometer optics configured to receive the light from the FTIR spectrometer, wherein the system is configured to measure polarized light and unpolarized reflectivities of the wafer in a wavelength range from 2 μm to 20 μm.
2 more elements
A method comprising:
- directing a beam of light toward a wafer using a light source;
- passing the beam of light reflected from the wafer through broadband reflectometer optics;
- receiving the beam of light reflected from the wafer at a spectroscopic reflectometer, wherein the spectroscopic reflectometer is configured to measure polarized light and unpolarized reflectivities of the wafer in a wavelength range from 2 μm to 20 μm, and wherein measurements of a reference spectrum and a sample spectrum are taken in parallel.
Dependencies are inferred from the claim text.