Thermal atomic layer etching processes
AssigneeASM IP Holding B.V.
InventorsTom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
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Abstract
Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
Claims33
A method of etching a film on a substrate in a reaction chamber by chemical atomic layer etching, the method comprising one or more etching cycles comprising:
- exposing the substrate to a first vapor-phase non-metal oxyhalide reactant and a second vapor-phase halide reactant;
- subsequently exposing the substrate to a third, different vapor-phase reactant, such that volatile species comprising one or more atoms from the film are formed;
- and,
- removing volatile species from the reaction chamber, wherein the substrate is not contacted with a plasma reactant during the etching cycle.
Dependencies are inferred from the claim text.