Methods of atomic layer deposition for selective film growth
AssigneeMerck Patent GmbH
InventorsJean-Sébastien Lehn, Charles Dezelah, Jacob Woodruff
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Abstract
Methods of forming metal-containing films by atomic layer deposition are provided. The methods include delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under sufficient conditions such that the metal-containing film selectively grows on at least a portion of the first substrate.
Claims20
A method of forming a metal-containing film by atomic layer deposition, wherein the method comprises delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under conditions sufficient for the metal-containing complex to:
- (i) deposit metal and etch the metal-containing film;
- (ii) deposit metal, etch the metal-containing film and allow for desorption from the metal-containing film;
- or
- (iii) deposit metal and allow for desorption from the metal-containing film;
- such that the metal-containing film selectively grows on at least a portion of the first substrate;
- and
- wherein the conditions comprise a super-conformal growth cycle sufficient for the metal-containing film to selectively grow on a lower portion of a feature in the first substrate.
A method of forming a metal-containing film by atomic layer deposition, wherein the method comprises delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under conditions sufficient for the metal-containing complex to:
- (i) deposit metal and etch the metal-containing film;
- (ii) deposit metal, etch the metal-containing film and allow for desorption from the metal-containing film;
- or
- (iii) deposit metal and allow for desorption from the metal-containing film;
- such that the metal-containing film selectively grows on at least a portion of the first substrate;
- wherein the conditions comprise one or more of:
- (i) a conformal growth cycle comprising delivering the metal-containing complex, the purge gas and the co-reactant to the substrate under conformal conditions;
- (ii) a super-conformal growth cycle comprising delivering the metal-containing complex, the purge gas and the co-reactant to the substrate under super-conformal conditions;
- and
- (iii) a sub-conformal growth cycle comprising delivering the metal-containing complex, the purge gas and the co-reactant to the substrate under sub-conformal conditions.
Dependencies are inferred from the claim text.