Process for producing isomer enriched higher silanes
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsGennadiy Itov, Jian Hou, Grigory Nikiforov
Life of this patent
Estimating the term…
Abstract
Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by pyrolysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature, residence time, and the relative amount of starting compounds. The disclosed synthesis methods allow facile preparation of n-tetrasilane.
Claims16
A method of selectively synthesizing n-tetrasilane, the method comprising:
- producing a n-Si4H10:i-Si4H10 mixture having a ratio ranging from approximately 5:1 to approximately 15:1 by heating a mixture of Si2H6 and Si3H8 to a temperature ranging from approximately 250° C. to approximately 360° C. in an absence of a catalyst for converting the Si2H6 and Si3H8 mixture into the n-Si4H10:i-Si4H10 mixture, and
- fractionally distilling the n-Si4H10:i-Si4H10 mixture to produce a Si-containing film forming composition comprising approximately 90% w/w to approximately 100% w/w n-Si4H10.
A method of selectively synthesizing n-tetrasilane, the method comprising:
- heating a mixture of Si2H6 and optionally Si3H8 in a reactor to a temperature ranging from approximately 250° C. to approximately 360° C. to produce a n-Si4H10:i-Si4H10 mixture having a ratio ranging from approximately 5:1 to approximately 15:1, in an absence of a catalyst for converting the Si2H6 and Si3H8 into the n-Si4H10:i-Si4H10 mixture, and
- fractionally distilling the n-Si4H10:i-Si4H10 mixture to produce a Si-containing film forming composition comprising approximately 90% w/w to approximately 100% w/w n-Si4H10.
Dependencies are inferred from the claim text.