Annular grindstone
AssigneeDisco Corporation
InventorHiroki Aikawa
Life of this patent
Estimating the term…
Abstract
An annular grindstone includes a grindstone portion including a binding material, and abrasive grains which are dispersed into the binding material to be fixed, in which the binding material contains a nickel-iron alloy. Preferably, a contained ratio of iron in the nickel-iron alloy is in a range of 5 wt % or more to less than 60 wt %. More preferably, a contained ratio of iron in the nickel-iron alloy is in a range of 20 wt % or more to 50 wt % or less. Preferably, the annular grindstone includes the grindstone portion only. In addition, the annular grindstone further includes an annular base including a grip portion, in which the grindstone portion is exposed at an outer peripheral edge of the annular base.
Claims8
an annular grindstone comprising:
- a grindstone portion including a binding material, and abrasive grains which are dispersed into the binding material to be fixed by electrodeposition to the grindstone,
- wherein the binding material contains a nickel-iron alloy;
- wherein a contained ratio of iron in the nickel-iron alloy is in a range of 20 wt % or more to 50 wt % or less.
A process for cutting a semiconductor wafer using an annular grindstone and cutting water, the grindstone comprising:
- a grindstone portion including a binding material, and abrasive grains which are dispersed into the binding material to be fixed by electrodeposition to the grindstone,
- wherein the binding material contains a nickel-iron alloy;
- wherein a contained ratio of iron in the nickel-iron alloy is in a range of 20 wt % or more to 50 wt % or less;
- the process comprising:
- bringing the grindstone into contact with the semiconductor wafer;
- supplying the cutter water to the grindstone, wherein the cutter water comprises carbon dioxide.
Dependencies are inferred from the claim text.