Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors

A method of forming a sub-micrometer, binary pressure sensor, the method comprising:

• forming a first electrically conductive structure embedded in a first interconnect dielectric material layer, wherein a bottom electrode is located on a surface of the first electrically conductive structure;
• forming a stack of a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode on a surface of the bottom electrode, wherein the multilayered MTJ pillar comprises a first magnetic reference layer and a second magnetic reference layer that are separated by a non-magnetic metallic spacer;
• and
• forming a second electrically conductive structure in a second interconnect dielectric material layer that laterally surrounds the multilayered MTJ pillar and the top electrode, wherein the second electrically conductive structure contacts a surface of the top electrode.