# US 11,225,718 B2 · Plasma treatment device and structure of reaction vessel for plasma treatment

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- Number: US 11,225,718 B2
- Document ID: US11225718B2
- Status: Granted
- Kind: B2
- Application number: 16/080,362
- Filed: 2016-03-03
- Published: 2019-02-14
- Granted: 2022-01-18
- Earliest claimed: 2016-03-03
- Assignees: Core Technology, Inc.; Askagi Corporation
- Applicants: Core Technology, Inc.; Askagi Corporation
- Inventors: Toshiaki Yoshimura; Hiroyuki Minowa; Lung Kei Amos Shek
- Web page: https://patentgrep.com/patent/US11225718B2

## CPC

- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- C23C 16/45559: {Diffusion of reactive gas to substrate}
- C23C 16/45565: {Shower nozzles}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- C23C 16/509: using internal electrodes
- H01J 37/32018: {Glow discharge}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32577: {Electrical connecting means}
- H05H 1/24: Generating plasma {(nuclear fusion reactors G21B1/00; gas-filled discharge reactors H01J37/32)}
- H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
- H01J 37/32899: {Multiple chambers, e.g. cluster tools}
- H01J 2237/3321: CVD [Chemical Vapor Deposition]
- H01J 2237/3323: uniformity
- H01J 2237/3325: large area
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS

## Abstract

The present invention improves the in-plane uniformity of film formation via a plasma treatment. It is provided a plasma treatment device constituted so that process gas introduced between an electrode plate and a shower plate is exhausted toward a counter electrode through a plurality of small holes formed in the shower plate, the plasma treatment device comprising a diffuser plate having a plurality of small holes, the diffuser plate being arranged substantially parallel with the shower plate, wherein the process gas is introduced between the electrode plate and the diffuser plate, passes through the plural small holes of the diffuser plate, reaches the shower plate and flows out from the plural small holes of the shower plate toward the electrode plate, and wherein within the small holes formed in the diffuser plate and the small holes formed in the shower plate, the small holes formed in a plate which exists more downstream along a flowing direction of the process gas are made in smaller diameters and an aperture ratio of each plate is made smaller in a plate which exists more upstream along the flowing direction of the process gas.

## Claims

### Claim 1

A plasma treatment device comprising:
an electrode plate having a main electrode plate, a first diffuser plate, a second diffuser plate, and a shower plate, in this order;
a metallic pipe, wherein the metallic pipe penetrates and is electrically conductively connected to all of the main electrode plate, the first diffuser plate, the second diffuser plate, and the shower plate, wherein the metallic pipe is configured to transmit a frequency power to all of the main electrode plate, the first diffuser plate, the second diffuser plate, and the shower plate, and wherein the metallic pipe is configured to distribute a process gas therethrough; and
a counter electrode,
wherein the first diffuser plate has a plurality of first small holes, the second diffuser plate has a plurality of second small holes, and the shower plate has a plurality of third small holes,
wherein the plasma treatment device is constituted so that the process gas introduced by the metallic pipe in a space between the main electrode plate and the shower plate is exhausted toward the counter electrode through the third small holes formed in the shower plate,
wherein the metallic pipe has gas ejection holes along a circumferential direction of the metallic pipe, the process gas is distributed to the electrode plate through the gas ejection holes, and the gas ejection holes are located between the main electrode plate and the first diffuser plate,
wherein an interval between the main electrode plate and the first diffuser plate is larger than an opening size of the gas ejection holes, and the interval between the main electrode plate and the first diffuser plate is maintained horizontally, and
wherein the process gas is introduced between the main electrode plate and the first diffuser plate through the gas ejection holes of the metallic pipe, passes through the first small holes of the first diffuser plate and the second small holes of the second diffuser plate in this order, and reaches the shower plate and flows out from the third small holes of the shower plate toward the counter electrode, such that the process gas is changed to plasma between the electrode plate and the counter electrode.

### Claim 2 (depends on 1)

The plasma treatment device according to claim 1,
wherein the electrode plate is electrically and integrally constituted as a whole,
wherein the frequency power is produced in one frequency power generator and is supplied to a plurality of portions of the electrode plate through one matching device and a transmission path,
wherein the transmission path is equally branched in a middle thereof and is connected to the electrode plate, and
wherein an impedance value of each transmission path after branched is mutually equal.

### Claim 3 (depends on 1)

The plasma treatment device according to claim 1, wherein formation positions of the plurality of third small holes formed in the shower plate and formation positions of the plurality of second small holes formed in the second diffuser plate are mutually different in a plane direction of the second diffuser plate and the shower plate.

### Claim 4 (depends on 1)

The plasma treatment device according to claim 1, wherein the interval between the main electrode plate and the first diffuser plate is wider than an interval between the shower plate and the second diffuser plate.

### Claim 5 (depends on 4)

The plasma treatment device according to claim 4, wherein the interval between the shower plate and the second diffuser plate is approximately equal to an interval between the first diffuser plate and the second diffuser plate.

### Claim 6 (depends on 1)

The plasma treatment device according to claim 1, further comprising a transmission path connected to the electrode plate, wherein the transmission path transmits the frequency power to the electrode plate.

### Claim 7 (depends on 1)

The plasma treatment device according to claim 1, wherein the main electrode plate is in contact with the first diffuser plate, the second diffuser plate, and the shower plate.

### Claim 8 (depends on 1)

The plasma treatment device according to claim 1, wherein the plasma treatment device satisfies Formulae (1) and (2):
R1>R2>R3 Formula (1):
H1<H2<H3 Formula (2):
wherein R1 is a diameter of the first small holes of the first diffuser plate, R2 is a diameter of the second small holes of the second diffuser plate, R3 is a diameter of the third small holes of the shower plate, H1 is an aperture ratio of the first diffuser plate, H2 is an aperture ratio of the second diffuser plate, and H3 is an aperture ratio of the shower plate.

### Claim 9 (depends on 1)

The plasma treatment device according to claim 1, wherein a side wall of the metallic pipe is in contact with an insulative communication path, and the insulative communication path is in contact with the main electrode plate.

### Claim 10 (depends on 1)

The plasma treatment device according to claim 1, wherein the first diffuser plate and the second diffuser plate are arranged substantially parallel with the shower plate.

### Claim 11

A plasma treatment reaction vessel comprising:
an electrode plate having a main electrode plate, a first diffuser plate, a second diffuser plate and a shower plate, in this order;
a metallic pipe, wherein the metallic pipe penetrates and is electrically conductively connected to all of the main electrode plate, the first diffuser plate, the second diffuser plate, and the shower plate, wherein the metallic pipe is configured to transmit a frequency power to all of the main electrode plate, the first diffuser plate, the second diffuser plate, and the shower plate, and wherein the metallic pipe is configured to distribute a process gas therethrough; and
a counter electrode,
wherein the first diffuser plate has a plurality of first small holes, the second diffuser plate has a plurality of second small holes, and the shower plate has a plurality of third small holes,
wherein the plasma treatment reaction vessel is constituted so that the process gas introduced by the metallic pipe in a space between the main electrode plate and the shower plate is exhausted toward the counter electrode through the third small holes formed in the shower plate,
wherein the metallic pipe has gas ejection holes along a circumferential direction of the metallic pipe, the process gas is distributed to the electrode plate through the gas ejection holes, and the gas ejection holes are located between the main electrode plate and the first diffuser plate,
wherein an interval between the main electrode plate and the first diffuser plate is larger than an opening size of the gas ejection holes, and the interval between the main electrode plate and the first diffuser plate is maintained horizontally, and
wherein the process gas is introduced between the main electrode plate and the first diffuser plate through the gas ejection holes of the metallic pipe, passes through the first small holes of the first diffuser plate and the second small holes of the second diffuser plate in this order, and reaches the shower plate and flows out from the third small holes of the shower plate toward the counter electrode, such that the process gas is changed to plasma between the electrode plate and the counter electrode.
