Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
AssigneeArray Photonics, Inc.
InventorsFerran Suarez, Ding Ding, Aymeric Maros
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Abstract
Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.
Claims29
A compound semiconductor optoelectronic structure, comprising:
- a substrate having a substrate surface;
- a first doped region overlying the substrate surface;
- an active region overlying the first doped region, wherein the active region comprises:
- a dilute nitride material;
- and
- the active region has a bandgap that is non-uniform orthogonal to the substrate surface;
- and
- a second doped region overlying the active region;
- wherein the active region comprises two or more active layers;
- and
- wherein at least one of the two or more active layers has a non-uniform bandgap.
A method of forming a semiconductor optoelectronic device, comprising:
- forming a first doped region overlying a substrate having a surface;
- forming an active region overlying the first doped region, wherein,
- the active region comprises a dilute nitride material;
- and
- the active region has a bandgap that is non-uniform orthogonal to the substrate surface;
- and
- forming a second doped region overlying the active region;
- wherein the active region comprises two or more active layers;
- and
- wherein at least one of the two or more active layers has a non-uniform bandgap.
Dependencies are inferred from the claim text.