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US 11,211,382 B2Granted
Methods and apparatuses including a boundary of a well beneath an active area of a tap
AssigneeMicron Technology, Inc.
InventorMichael Smith
Life of this patent
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Abstract
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well has an edge that is substantially beneath an edge of an active area of a tap to the well.
Claims19
An apparatus comprising:
- an N-well having formed within a P-type semiconductor structure;
- and
- a tap to the N-well, wherein a boundary between the N-well and the P-type semiconductor structure is substantially beneath an active area of the tap, and wherein the boundary of the well intersects a first trench in the semiconductor structure proximate a corner of the first trench, and further wherein the active area of the tap includes an N− doped area, and a N+ doped area more heavily doped than the N− doped area, and wherein the N− doped area is substantially between the N+ doped area and a first side of the tap adjacent the first trench.
A method for forming a substrate tap, the method comprising:
- forming an N-well within a P-type semiconductor structure;
- and
- forming a tap to the N-well comprising an active area such that a boundary between the well and the P-type semiconductor structure is substantially beneath the active area of the tap and wherein the active area includes an N− doped area and an N+ doped area more heavily doped than the N− doped area, and further wherein a first sidewall of a trench forms a first side of the tap, and further wherein the boundary of the N-well intersects the trench at or near a corner between the first sidewall of the trench and a bottom of the trench;
- and wherein the N− doped area is substantially between the N+ doped area and the first side of the tap.
1 more element
Dependencies are inferred from the claim text.