Method for processing an ultra-high density space interconnect lead under light source guidance

A method for processing an ultra-high density interconnection wire under light source guidance, comprising the steps of:

• S1:
• preparing a photo-thermal response conductive paste, and putting the photo-thermal response conductive paste into an air pressure injector;
• S2:
• driving the air pressure injector, so that a micro-nozzle on the air pressure injector is aligned with a central position of a first chip bonding pad of a first chip;
• extruding, by the air pressure injector, the photo-thermal response conductive paste onto the first chip bonding pad;
• a surface of the photo-thermal response conductive paste is cured in air, so that the photo-thermal response conductive paste forms an interconnection wire and connects to the first chip;
• S3:
• stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire;
• S4:
• emitting light and irradiating, by a linear source, on the interconnection wire to bend a free end of the interconnection wire and bend to an upper side of a second chip bonding pad;
• S5:
• pressing, by an extrusion mechanism, the free end of the interconnection wire on the second chip bonding pad, so that the interconnection wire connects the first chip and a second chip;
• and
• S6:
• after the first chip and the second chip are connected, encapsulating the first chip and the second chip by dispensing glues on the first chip and the second chip.