Vacuum-integrated hardmask processes and apparatus

A semiconductor processing apparatus, comprising:

• a dry deposition module comprising a reactor chamber for dry depositing an EUV-sensitive organometallic film on a semiconductor substrate;
• and
• a dry development module for removing an unexposed portion of a pattern formed in the organometallic film on the substrate by EUV exposure of a portion of the organometallic film;
• a controller including one or more memory devices, one or more processors and system control software coded with instructions for conducting photoresist-less metal mask formation, the instructions comprising instructions for,
• in the deposition module, dry depositing the EUV-sensitive organometallic film on a semiconductor substrate;
• following the dry deposition, transferring under vacuum the substrate to a patterning module comprising an Extreme Ultraviolet (EUV) photolithography tool for EUV lithographic patterning of the organometallic film by exposure of a portion of the organometallic film to EUV radiation, resulting in a pattern of exposed and the unexposed portions in the organometallic film;
• and
• in the dry development module, obtaining the semiconductor substrate following EUV lithographic patterning of the organometallic film, and dry developing the pattern in the organometallic film with a non-plasma treatment to remove the unexposed portion of the organometallic film to form a metal-containing hardmask.