Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix

A method of fabricating a semiconductor structure, the method comprising:

• forming an anisotropic nanocrystalline core comprising a first semiconductor material;
• forming an anisotropic nanocrystalline shell from a second, different, semiconductor material to completely surround the anisotropic nanocrystalline core,
• forming a nanocrystalline outer shell from a third semiconductor material, different from the second semiconductor material, to at least partially surround the nanocrystalline shell,
• wherein the anisotropic nanocrystalline core, the anisotropic nanocrystalline shell and the nanocrystalline outer shell form a quantum dot;
• forming an insulator layer encapsulating the nanocrystalline outer shell, the anisotropic nanocrystalline shell, and the anisotropic nanocrystalline core to form a coated quantum dot;
• covalently bonding a coupling agent to an outer surface of the insulator layer;
• and
• embedding the coated quantum dot in a matrix material, wherein
• the coated quantum dot is incorporated into the matrix material by cross-linking through multiple and interchain binding to form a cross-linked semiconductor structure, or
• the coated quantum dot is incorporated into the matrix material by polarity-based chemical similarity and dissolution to form a polarity based semiconductor structure, or
• the coated quantum dot is incorporated into the matrix material by reactive tethering by sparse binding and chemical similarity to form a reactive tethering based semiconductor structure.