Resist underlayer film-forming composition containing novolac polymer having secondary amino group

A method for producing a semiconductor device, the method comprising the steps of:

• forming an underlayer film from the resist underlayer film-forming composition on a semiconductor substrate, the resist underlayer film-forming composition comprising a novolac polymer obtained by a reaction of an aldehyde compound and an aromatic compound having a secondary amino group;
• forming a resist film on the underlayer film;
• forming a resist pattern by irradiation with light or an electron beam and development;
• etching the underlayer film by using the formed resist pattern;
• and
• processing the semiconductor substrate by using the patterned underlayer film.

A method for producing a semiconductor device, the method comprising the steps of:

• forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate, the resist underlayer film-forming composition comprising a novolac polymer obtained by a reaction of an aldehyde compound and an aromatic compound having a secondary amino group;
• forming a hard mask on the resist underlayer film;
• further forming a resist film on the hard mask;
• forming a resist pattern by irradiation with light or an electron beam and development;
• etching the hard mask by using the formed resist pattern;
• etching the resist underlayer film by using the patterned hard mask;
• and
• processing the semiconductor substrate by using the patterned underlayer film.