Tellurate crystal, growth method therefor, and use thereof

A growing method of a tellurite crystal having a chemical formula of MTe3O8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, and wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ≥70%, wherein the crystal is grown using a flux method, the growing method comprising steps of:

• (1) compounding raw materials MO2 (M=Ti, Zr, Hf) and TeO2 according to an MTe3O8 stoichiometric ratio, homogeneously mixing and tableting, sintering at 500° C.˜650° C. for 20˜40 h, cooling, grinding, and then sintering at 600˜700° C. for 20˜40 h, obtaining a pure-phase tellurite polycrystal;
• adding the pure-phase tellurite polycrystal to a flux system, then obtaining a crystal growth material;
• or, compounding raw materials MO2 (M=Ti, Zr, Hf) and TeO2 according to an MTe3O8 stoichiometric ratio, directly adding them to the flux system, homogeneously mixing, thereby obtaining a crystal growth material;
• wherein the flux system is selected from one of the following substances, but not limited thereto:
• (a) TeO2;
• (b) A2CO3—TeO2 (A=Li, Na, K, Rb or/and Cs), wherein the mole ratio between M2CO3 and TeO2 is 2:
• (1˜5);
• (c) MoO3;
• (d) B2O3;
• (e) PbO—B2O3;
• wherein the mole ratio between the tellurite and the flux system is 1:
• (1˜5);
• (2) putting the crystal growth material obtained in step (1) in a platinum crucible, heating to melt it completely, stirring homogeneously, cooling to facilitate the crystal to be nucleated spontaneously and to grow to obtain a tellurite seed crystal;
• putting the crystal growth material obtained in step (1) in a platinum crucible, heating to melt it completely, stirring homogeneously, cooling to a saturation point of the solution, feeding the tellurite seed crystal to perform crystal transformation, cooling to facilitate the crystal to grow;
• wherein a temperature range for the crystal growth is 750˜900° C., and a cooling rate is 0.01˜5° C./h.