Quantum dot devices with strain control

A quantum dot device, comprising:

• a quantum well stack including a quantum well layer, wherein the quantum well layer is spaced apart from a top surface of the quantum well stack;
• a first gate on the top surface of the quantum well stack;
• and
• a second gate on the top surface of the quantum well stack;
• wherein the quantum well layer has a first strain under the first gate, a second strain under the second gate, and the first strain is different from the second strain.

A method of manufacturing a quantum dot device, comprising:

• forming a quantum well stack, wherein the quantum well stack includes a quantum well layer and a barrier layer above the quantum well layer;
• forming a first gate above the quantum well stack, wherein the first gate includes a first gate metal;
• and
• forming a second gate above the quantum well stack, wherein the second gate includes a second gate metal, the second gate metal has a different material structure than the first gate metal, and the first and second gates induce differential strain in the quantum well layer.