Multiple arc chamber source
AssigneeAxcelis Technologies, Inc.
InventorsJoshua Max Abeshaus, Neil Bassom, Camilla Lambert, Caleb Wisch, Kyle Hinds, Caleb Bell
Life of this patent
Estimating the term…
Abstract
An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.
Claims19
An ion source for forming an ion beam, the ion source comprising:
- an extraction position generally defining a terminus of the ion beam;
- a plurality of arc chambers;
- and
- a translation apparatus configured to selectively translate each of the plurality of arc chambers to the extraction position, wherein the translation apparatus comprises a carrousel, wherein the carrousel comprises:
- a static cylinder that is rotationally fixed with respect to the extraction position;
- a dynamic cylinder rotatably coupled to the static cylinder, wherein the plurality of arc chambers are operably coupled to the dynamic cylinder and circumferentially spaced thereabout, and wherein a rotational position of the dynamic cylinder with respect to the static cylinder selectively aligns each of the plurality of arc chambers with the extraction position;
- and
- a gas connection element associated with each of the plurality of arc chambers, respectively, wherein each gas connection element is configured to selectively interface with a fixed gas conduit associated with the static cylinder based on the rotational position of the dynamic cylinder, and wherein each gas connection element is configured to align with the fixed gas conduit upon the selective alignment of each of the plurality of arc chambers with the extraction position, whereby the gas connection element and fixed gas conduit are separated by a gap.
An ion implantation system, the ion implantation system comprising:
- an ion source configured to form an ion beam along a beamline, wherein the ion source comprises a plurality of arc chambers, wherein each of the plurality of arc chambers is selectively positionable along the beamline to respectively form the ion beam, wherein the ion beam has characteristics associated with the respective each of the plurality of arc chambers that is selectively positioned along the beamline, wherein the plurality of arc chambers are operably coupled to a carrousel, wherein the carrousel comprises:
- a static cylinder that is rotationally fixed with respect to the beamline;
- a dynamic cylinder rotatably coupled to the static cylinder, wherein the plurality of arc chambers are operably coupled to the dynamic cylinder and circumferentially spaced thereabout, and wherein a rotational position of the dynamic cylinder with respect to the static cylinder selectively aligns each of the plurality of arc chambers with the beamline;
- and
- a gas connection element associated with each of the plurality of arc chambers, respectively, wherein each gas connection element is configured to selectively interface with a fixed gas conduit associated with the static cylinder based on the rotational position of the dynamic cylinder, and wherein each gas connection element is configured to align with the fixed gas conduit upon the selective alignment of each of the plurality of arc chambers with the beamline, whereby the gas connection element and fixed gas conduit are separated by a gap.
Dependencies are inferred from the claim text.