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US 11,180,373 B2Granted
Nanocrystalline graphene and method of forming nanocrystalline graphene
AssigneeSamsung Electronics Co., Ltd.
InventorsHyunjae Song, Keunwook Shin, Hyeonjin Shin, Changseok Lee, Changhyun Kim, Kyungeun Byun, Seungwon Lee, Eunkyu Lee
Life of this patent
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Abstract
Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
Claims16
A graphene product comprising:
- a nanocrystalline graphene,
- the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%, wherein
- the nanocrystalline graphene includes hydrogen in an amount of about 1 at % to about 20 at %, and
- the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc.
1 more element
A graphene product comprising:
- a nanocrystalline graphene,
- the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at % to about 20 at %, wherein
- the nanocrystalline graphene has a density of about 1.6 g/cc to about 2.1 g/cc.
A graphene product comprising:
- a nanocrystalline graphene,
- the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm,
- the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV.
Dependencies are inferred from the claim text.