Photoelectric conversion apparatus and image pickup system

A photoelectric conversion apparatus comprising:

• a first unit and a second unit,
• wherein each of the first unit and the second unit include:
• a first impurity region of n-type disposed in a semiconductor layer;
• a second impurity region of n-type disposed in the semiconductor layer;
• charges being transferred from the first impurity region to the second impurity region;
• a third impurity region of n-type disposed in the semiconductor layer;
• a first transfer gate for transferring charges from the first impurity region to the second impurity region;
• a second transfer gate for transferring charges from the second impurity region to the third impurity region;
• a dielectric region located above the first impurity region and surrounded by an insulator layer;
• and
• a first light-shielding layer covering the second impurity region between the insulator layer and the semiconductor layer, and having a first opening located above the first impurity region and a second opening,
• wherein a contact plug on the second transfer gate and a contact plug on the third impurity region are disposed in the second opening,
• wherein the first unit is configured so that the first impurity region of the first unit is able to receive light through the first opening of the first light-shielding layer, and
• wherein the second unit is configured so that the first impurity region of the second unit is covered with a second light-shielding layer.

A photoelectric conversion apparatus comprising:

• a first unit and a second unit;
• wherein each of the first unit and the second unit includes:
• a charge generation region disposed in a semiconductor layer;
• a charge storage region disposed in the semiconductor layer;
• a floating region disposed in the semiconductor layer;
• a first transfer gate for transferring charges from the charge generation region to the charge storage region;
• a second transfer gate for transferring charges from the charge storage region to the floating region;
• a dielectric region located above the charge generation region and surrounded by an insulator layer;
• and
• a first metal layer covering the charge storage region located between the insulator layer and the semiconductor layer, and having a first opening located above the charge generation region and a second opening,
• wherein a contact plug on the second transfer gate and a contact plug on the floating region are disposed in the second opening,
• wherein the first unit is configured so that the charge generation region of the first unit is able to receive light through the first opening of the first metal layer, and
• wherein the second unit is configured so that the charge generation region of the second unit is covered with a second metal layer.

A photoelectric conversion apparatus comprising:

• a first unit and a second unit,
• wherein each of the first unit and the second unit includes:
• a charge generation region disposed in a semiconductor layer;
• a charge storage region disposed in the semiconductor layer;
• a floating region disposed in the semiconductor layer;
• a first transfer gate for transferring charges from the charge generation region to the charge storage region;
• a second transfer gate for transferring charges from the charge storage region to the floating region;
• and
• a first metal layer covering the charge storage region located between the insulator layer and the semiconductor layer, and having a first opening located above the charge generation region and a second opening,
• wherein a contact plug on the second transfer gate and a contact plug on the floating region are disposed in the second opening,
• wherein the first unit is configured so that the charge generation region of the first unit is able to receive light through the first opening of the first metal layer, and
• wherein the second unit is configured so that the charge generation region of the second unit is covered with a second metal layer.